説明
Abstract We report on a distinct correlation between the 1.47 eV emission band and the dislocation density in bulk CdTe. The 1.47 eV band intensifies around the high-dislocation area (lineage structure) and at the position just on dislocation bundle. On the other hand, the 1.47 eV band was hardly observed in the low-dislocation area (etch pit density less than 2 × 105 cm-2) or at the position away from the dislocation bundle. Furthermore, the 1.47 eV band was intensified by γ-ray irradiation of 1.7 × 107 Gy, which produced a great number of Frenkel defects. It was shown that the 1.47 eV band is related not only to an extended defect such as a dislocation, but also to a point defect such as a Frenkel defect. These results suggest that the strain field induced in the vicinity of the defects is responsible for the recombination center of the 1.47 eV band.
収録刊行物
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- Journal of Crystal Growth
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Journal of Crystal Growth 138 (1-4), 346-351, 1994-04
Elsevier BV
