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- Yoji Chiba
- Saitama University
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- Yuichi Yamazaki
- National Institutes for Quantum and Radiological Science and Technology (QST)
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- Shin Ichiro Sato
- National Institutes for Quantum and Radiological Science and Technology (QST)
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- Takahiro Makino
- National Institutes for Quantum and Radiological Science and Technology (QST)
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- Naoto Yamada
- National Institutes for Quantum and Radiological Science and Technology (QST)
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- Takahiro Satoh
- National Institutes for Quantum and Radiological Science and Technology (QST)
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- Yasuto Hijikata
- Saitama University
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- Takeshi Ohshima
- National Institutes for Quantum and Radiological Science and Technology (QST)
説明
<jats:p>We demonstrated the enhancement of the optically detected magnetic resonance (ODMR) contrast of negatively charged silicon vacancy (V<jats:sub>Si</jats:sub><jats:sup>-</jats:sup>) in SiC by thermal treatment. To create high density V<jats:sub>Si</jats:sub><jats:sup>-</jats:sup>, Proton Beam Writing (PBW) was conducted. After an annealing at 600 °C, ODMR contrast showed the highest value in the investigated temperature range. At a fewer irradiation fluence, despite no significant change was observed in terms of V<jats:sub>Si</jats:sub><jats:sup>-</jats:sup> PL intensity, the improvement of the ODMR contrast was observed. Considering defect energy levels and annealing behavior previously reported, it was deduced that the improvement of the ODMR contrast was caused by the reduction of other irradiation induced defect centers, such as EH1/EH3 centers.</jats:p>
収録刊行物
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- Materials Science Forum
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Materials Science Forum 1004 337-342, 2020-07-28
Trans Tech Publications, Ltd.