Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition
-
- N. Huby
- MDM-INFM , 2 via camillo Olivetti, 20041 Agrate Brianza, Italy
-
- S. Ferrari
- MDM-INFM , 2 via camillo Olivetti, 20041 Agrate Brianza, Italy
-
- E. Guziewicz
- Polish Academy of Sciences Institute of Physics, , Warsaw 02668, Poland
-
- M. Godlewski
- Polish Academy of Sciences Institute of Physics, , Warsaw 02668, Poland
-
- V. Osinniy
- Polish Academy of Sciences Institute of Physics, , Warsaw 02668, Poland
書誌事項
- 公開日
- 2008-01-14
- DOI
-
- 10.1063/1.2830940
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>We report on the electrical properties of thin film transistors based on zinc oxide (ZnO) layers grown by low temperature (100–170°C) atomic layer deposition. As evidenced through Hall effect measurements, a drastic decrease of the carrier concentration occurred for ZnO films grown at 100°C. Time of flight–secondary ions mass spectroscopy analysis revealed that this decrease is associated with an increase of the hydroxide groups in the ZnO layer which suppressed oxygen vacancy formation. Transistors fabricated from ZnO films grown at 100°C exhibit a high Ion∕Ioff ratio (∼107) and an encouraging intrinsic channel mobility (∼1cm2∕Vs).</jats:p>
収録刊行物
-
- Applied Physics Letters
-
Applied Physics Letters 92 (2), 023502-, 2008-01-14
AIP Publishing