(GaMn)As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxy

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書誌事項

公開日
1997-05
権利情報
  • https://www.elsevier.com/tdm/userlicense/1.0/
DOI
  • 10.1016/s0022-0248(96)00937-2
公開者
Elsevier BV

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説明

We have grown novel III-V diluted magnetic semiconductors, (Ga 1-x Mn x )As, on GaAs substrates by low-temperature molecular beam epitaxy using strong nonequilibrium growth conditions. When the Mn concentration x is relatively low (≤ 0.08), homogeneous alloy semiconductors, GaMnAs, are grown with zincblende structure and slightly larger lattice constants than that of GaAs, whereas inhomogeneous structures with zincblende GaMnAs (or GaAs) plus hexagonal MnAs are formed when x is relatively high. Magnetization measurements indicate that the homogeneous GaMnAs films have ferromagnetic ordering at low temperature.

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