Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency

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  • A. Bhattacharyya
    Boston University 1 Department of Electrical and Computer Engineering and Center for Photonics Research, , Boston, Massachusetts 02215, USA
  • T. D. Moustakas
    Boston University 1 Department of Electrical and Computer Engineering and Center for Photonics Research, , Boston, Massachusetts 02215, USA
  • Lin Zhou
    Arizona State University 2 Department of Physics, , Tempe, Arizona 85287, USA
  • David. J. Smith
    Arizona State University 2 Department of Physics, , Tempe, Arizona 85287, USA
  • W. Hug
    Photon Systems, Inc. 3 , Covina, California 91722-3417, USA

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<jats:p>We report the development of Al0.7Ga0.3N/AlN quantum wells with high internal quantum efficiency. All samples had identical well and barrier thickness but the III/V flux ratio was varied during growth by increasing the Ga flux. The luminescence spectra show single peaks which vary from 220 nm (III/V∼1) to 250 nm (III/V⪢1) with internal quantum efficiency varying from 5% to 50%, respectively. To account for these results, a growth model was proposed in which at III/V∼1 the growth proceeds via vapor phase epitaxy, while at III/V⪢1 the growth proceeds via liquid phase epitaxy.</jats:p>

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