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- M. Miura-Mattausch
- Graduate Sch. of Adv. Sci. of Matter, Hiroshima Univ.
書誌事項
- 公開日
- 2006-09
- 権利情報
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- https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
- https://doi.org/10.15223/policy-029
- https://doi.org/10.15223/policy-037
- DOI
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- 10.1109/ted.2006.880374
- 公開者
- Institute of Electrical and Electronics Engineers (IEEE)
この論文をさがす
説明
The compact MOSFET model development trend leads to models based on the channel surface potential, allowing higher accuracy and a reduced number of model parameters. Among these, the Hiroshima University Semiconductor Technology Academic Research Center IGFET Model (HiSIM) solves the surface potentials with an efficient physically correct iteration procedure, thus avoiding additional approximations without any computer run-time penalty. It is further demonstrated that excellent model accuracy for higher-order phenomena, which is a prerequisite for accurate RF circuit simulation, is achieved by HiSIM without any new model parameters in addition to those for describing the current-voltage characteristics
収録刊行物
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- IEEE Transactions on Electron Devices
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IEEE Transactions on Electron Devices 53 (9), 1994-2007, 2006-09
Institute of Electrical and Electronics Engineers (IEEE)
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詳細情報 詳細情報について
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- CRID
- 1363670319541848960
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- ISSN
- 15579646
- 00189383
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- データソース種別
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- Crossref
- OpenAIRE
