Polar Discontinuity Doping of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>LaVO</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Interface
書誌事項
- 公開日
- 2007-12-06
- 権利情報
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- http://link.aps.org/licenses/aps-default-license
- DOI
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- 10.1103/physrevlett.99.236805
- 10.48550/arxiv.0710.2174
- 公開者
- American Physical Society (APS)
この論文をさがす
説明
We have investigated the transport properties of LaVO_3/SrTiO_3 Mott insulator/band insulator heterointerfaces for various configurations. The (001)-oriented n-type VO_2/LaO/TiO_2 polar discontinuity is conducting, exhibiting a LaVO_3 thickness-dependent metal-insulator transition and low temperature anomalous Hall effect. The (001) p-type VO_2/SrO/TiO_2 interface, formed by inserting a single layer of bulk metallic SrVO_3 or SrO, drives the interface insulating. The (110) heterointerface is also insulating, indicating interface conduction arising from electronic reconstructions.
18 pages, 5 figures
収録刊行物
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- Physical Review Letters
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Physical Review Letters 99 (23), 236805-, 2007-12-06
American Physical Society (APS)