Low temperature a-Si:H photodiodes and flexible image sensor arrays patterned by digital lithography

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  • Tse Nga Ng
    Palo Alto Research Center , 3333 Coyote Hill Road, Palo Alto, California 94304
  • Rene A. Lujan
    Palo Alto Research Center , 3333 Coyote Hill Road, Palo Alto, California 94304
  • Sanjiv Sambandan
    Palo Alto Research Center , 3333 Coyote Hill Road, Palo Alto, California 94304
  • Robert A. Street
    Palo Alto Research Center , 3333 Coyote Hill Road, Palo Alto, California 94304
  • Scott Limb
    Palo Alto Research Center , 3333 Coyote Hill Road, Palo Alto, California 94304
  • William S. Wong
    Palo Alto Research Center , 3333 Coyote Hill Road, Palo Alto, California 94304

Description

<jats:p>Hydrogenated amorphous silicon-based image sensor arrays were fabricated on polyethylene naphthalate substrates, with photodiodes optimized for process temperatures of 150°C. An optimal i-layer thickness was determined to minimize carrier recombination and to maintain sufficient light absorption and acceptable leakage current. Patterning of the thin-film transistor backplane was accomplished using ink-jet printed etch masks. A flexible image sensor is demonstrated with 75dots∕in. resolution over 180×180pixels and with sensitivity of 1.2pW∕cm2.</jats:p>

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