Defect control in nanoimprint lithography

DOI PDF 被引用文献4件
  • Lei Chen
    NanoOpto Corporation , 1600 Cottontail Lane, Somerset, New Jersey 08873
  • Xuegong Deng
    NanoOpto Corporation , 1600 Cottontail Lane, Somerset, New Jersey 08873
  • Jian Wang
    NanoOpto Corporation , 1600 Cottontail Lane, Somerset, New Jersey 08873
  • Ken Takahashi
    NanoOpto Corporation , 1600 Cottontail Lane, Somerset, New Jersey 08873
  • Feng Liu
    NanoOpto Corporation , 1600 Cottontail Lane, Somerset, New Jersey 08873

書誌事項

公開日
2005-11-01
DOI
  • 10.1116/1.2130352
公開者
American Vacuum Society

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説明

<jats:p>Major defects encountered in nanoimprint lithography (NIL) process, especially particle and gap associated defects are studied in this article. Unlike in other lithography, a particle induced defect in NIL is larger than the particle itself. To remove the particles, a dry clean process for the nanostructure-patterned surface is explored. The gap-associated defect is a unique phenomenon in NIL, which is induced by the incomplete contact between mold and substrate. The pressure required to eliminate voids during the NIL process is discussed. Based on the studies, both visual particle and void associated defects free 4in. and even larger wafers are achieved.</jats:p>

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