Direct observation of fine structure in the concentration of the deep donor [EL2] and its correlation with dislocations in undoped, semi-insulating GaAs

DOI PDF 被引用文献4件
  • M. R. Brozel
    Department of Electrical and Electronic Engineering, Trent Polytechnic, Burton Street, Nottingham NG1 4BU, United Kingdom
  • I. Grant
    Cambridge Instruments, Rustat Road, Cambridge CB1 3QH, United Kingdom
  • R. M. Ware
    Roland Ware Consultancy, 15 Telegraph Street, Cottenham, Cambridge CB4 4QU, United Kingdom
  • D. J. Stirland
    Plessey Research (Caswell) Limited, Allen Clark Research Centre, Caswell, Towcester, Northamptonshire NN12 8EQ, United Kingdom
  • M. S. Skolnick
    Royal Signals and Radar Establishment, St. Andrews Road, Great Malvern, Worcestershire WR14 3PS, United Kingdom

書誌事項

公開日
1984-08-15
DOI
  • 10.1063/1.334082
公開者
AIP Publishing

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説明

<jats:p>Spatial variations in resistivity, dislocation density and [EL2] concentration across {001}, and sometimes {110}, specimens from semi-insulating, undoped, liquid encapsulated Czochralski GaAs ingots have been measured. By using detection methods capable of high spatial resolution (∼100 μm) it has been shown that fine structure in the well known ‘‘M’’- or ‘‘W’’-shaped distributions of dislocation density and [EL2] across 〈110〉 diameters of {001} wafers occurs. A close correlation between complex dislocation substructures, revealed by etching methods, and [EL2] distributions, revealed by infrared (1 μm) absorption microscopy, has been confirmed. The implications both for processes involving dislocation interactions during ingot growth and for the electrical properties of the semi-insulating material are considered.</jats:p>

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