Photovoltaic properties of ion-beam synthesized β-FeSi2/n-Si heterojunctions

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書誌事項

公開日
2001-01
権利情報
  • https://www.elsevier.com/tdm/userlicense/1.0/
DOI
  • 10.1016/s0040-6090(00)01753-3
公開者
Elsevier BV

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説明

We present the first evident photovoltaic responses from ion-beam synthesized (IBS) polycrystalline p-type β-FeSi2/n-Si(100) heterojunctions. The triple ion implantation and subsequent annealing at 800°C provided polycrystalline continuous layers ∼60-nm thick with large crystalline grains of ∼10 μm. The high temperature and long annealing time were very effective in amplifying the photovoltaic responses from the heterojunctions. We achieved a maximum open-circuit voltage of 0.34 V by 5 mW/cm2 of white light illumination. Furthermore, we confirmed that the annealing procedure at 500°C induced the precipitation of the psuedomorphic metallic γ phase, which is detrimental to both rectification and the photovoltaic voltage at the p–n heterojunction.

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