Modal gain and internal optical mode loss of a quantum dot laser

DOI PDF 被引用文献2件
  • E. Herrmann
    Department of Physics and Astronomy, University of Wales Cardiff, Cardiff CF2 3YB, United Kingdom
  • P. M. Smowton
    Department of Physics and Astronomy, University of Wales Cardiff, Cardiff CF2 3YB, United Kingdom
  • H. D. Summers
    Department of Physics and Astronomy, University of Wales Cardiff, Cardiff CF2 3YB, United Kingdom
  • J. D. Thomson
    Department of Physics and Astronomy, University of Wales Cardiff, Cardiff CF2 3YB, United Kingdom
  • M. Hopkinson
    EPSRC Central Facility for III–V Semiconductors, Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

書誌事項

公開日
2000-07-10
DOI
  • 10.1063/1.126911
公開者
AIP Publishing

この論文をさがす

説明

<jats:p>The modal gain spectra and internal optical mode loss of a semiconductor laser structure containing a single layer of InGaAs quantum dots have been measured independently and directly as a function of current density. The quantum dot gain exhibits no obvious polarization dependence. The maximum modal gain of (11±4) cm−1 obtained from the ground state of a single layer of quantum dots is in this case insufficient for lasing operation since the internal optical mode loss measured on the same sample is (11±4) cm−1. As expected laser emission is not observed from the dot ground state, but from the excited dot state or from the wetting layer depending on device length.</jats:p>

収録刊行物

被引用文献 (2)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ