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- I. Torres
- University of Wales School of Informatics, , Dean Street, Bangor, Gwynedd LL57 1UT, United Kingdom
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- D. M. Taylor
- University of Wales School of Informatics, , Dean Street, Bangor, Gwynedd LL57 1UT, United Kingdom
書誌事項
- 公開日
- 2005-10-01
- DOI
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- 10.1063/1.2081109
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>The admittance of polymer metal-insulator-semiconductor (MIS) capacitors has been measured as a function of frequency and applied voltage. The results reveal the presence of hole trapping states at the interface of the polysilsesquioxane insulator and the poly(3-hexylthiophene) semiconductor. The states appear to be distributed in two bands: one close to the equilibrium Fermi level at the semiconductor surface, the other ∼0.5eV above. Annealing the devices under vacuum for several hours at 90°C increases the concentration of the shallower traps to ∼3×1012cm−2eV−1, while decreasing the concentration of deep traps to ∼1×1010cm−2eV−1. Annealing improves the bulk hole mobility to ∼1×10−4cm2V−1s−1 while reducing the field-effect mobility in MIS field-effect transistors (FETs) slightly to ∼7×10−3cm2V−1s−1. Although the concentration of interface states is sufficiently great to account for gate-bias-induced threshold voltage instability in MISFETs, their associated time constants are much too short to explain the long term nature of the instability.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 98 (7), 073710-, 2005-10-01
AIP Publishing