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- Jae-Hyuk Ahn
- Department of Electrical Engineering 1 , KAIST, Daejeon 305-701, South Korea
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- Jee-Yeon Kim
- Department of Electrical Engineering 1 , KAIST, Daejeon 305-701, South Korea
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- Myeong-Lok Seol
- Department of Electrical Engineering 1 , KAIST, Daejeon 305-701, South Korea
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- David J. Baek
- Department of Electrical Engineering 1 , KAIST, Daejeon 305-701, South Korea
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- Zheng Guo
- Department of Electrical Engineering 1 , KAIST, Daejeon 305-701, South Korea
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- Chang-Hoon Kim
- Department of Electrical Engineering 1 , KAIST, Daejeon 305-701, South Korea
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- Sung-Jin Choi
- Department of Electrical Engineering and Computer Sciences, University of California 2 , Berkeley, California 94720, USA
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- Yang-Kyu Choi
- Department of Electrical Engineering 1 , KAIST, Daejeon 305-701, South Korea
書誌事項
- 公開日
- 2013-02-25
- DOI
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- 10.1063/1.4793655
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>A pH sensor composed of a double-gate silicon nanowire field-effect transistor (DG Si-NW FET) is demonstrated. The proposed DG Si-NW FET allows the independent addressing of the gate voltage and hence improves the sensing capability through an application of asymmetric gate voltage between the two gates. One gate is a driving gate which controls the current flow, and the other is a supporting gate which amplifies the shift of the threshold voltage, which is a sensing metric, and which arises from changes in the pH. The pH signal is also amplified through modulation of the gate oxide thickness.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 102 (8), 83701-, 2013-02-25
AIP Publishing
