Fabrication of large area subwavelength antireflection structures on Si using trilayer resist nanoimprint lithography and liftoff
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- Zhaoning Yu
- Department of Electrical Engineering, Nanostructure Laboratory, Princeton University, Princeton, New Jersey 08544
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- He Gao
- Department of Electrical Engineering, Nanostructure Laboratory, Princeton University, Princeton, New Jersey 08544
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- Wei Wu
- Department of Electrical Engineering, Nanostructure Laboratory, Princeton University, Princeton, New Jersey 08544
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- Haixiong Ge
- Department of Electrical Engineering, Nanostructure Laboratory, Princeton University, Princeton, New Jersey 08544
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- Stephen Y. Chou
- Department of Electrical Engineering, Nanostructure Laboratory, Princeton University, Princeton, New Jersey 08544
書誌事項
- 公開日
- 2003-11-01
- DOI
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- 10.1116/1.1619958
- 公開者
- American Vacuum Society
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説明
<jats:p>In this article we report on the fabrication of subwavelength antireflection structures on silicon substrates using a trilayer resist nanoimprint lithography and liftoff process. We have fabricated cone-shaped nanoscale silicon pillars with a continuous effective index gradient, which greatly enhances its antireflective performances. Our measurements show that the two-dimensional subwavelength structure effectively suppresses surface reflection over a wide spectral bandwidth and a large field of view. A reflectivity of 0.3% was measured at 632.8 nm wavelength, which is less than 1% of the flat silicon surface reflectivity.</jats:p>
収録刊行物
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- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 21 (6), 2874-2877, 2003-11-01
American Vacuum Society