Use of atomic layer epitaxy buffer for the growth of InSb on GaAs by molecular beam epitaxy
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- P. E. Thompson
- Naval Research Laboratory, Washington, DC 20375-5000
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- J. L. Davis
- Naval Research Laboratory, Washington, DC 20375-5000
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- J. Waterman
- Naval Research Laboratory, Washington, DC 20375-5000
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- R. J. Wagner
- Naval Research Laboratory, Washington, DC 20375-5000
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- D. Gammon
- Naval Research Laboratory, Washington, DC 20375-5000
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- D. K. Gaskill
- Naval Research Laboratory, Washington, DC 20375-5000
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- R. Stahlbush
- Naval Research Laboratory, Washington, DC 20375-5000
書誌事項
- 公開日
- 1991-05-15
- DOI
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- 10.1063/1.347608
- 公開者
- AIP Publishing
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説明
<jats:p>A 300 Å buffer layer of InSb grown by atomic layer epitaxy at a substrate temperature of 300 °C at the GaAs/InSb interface has been employed to grow epitaxial films of InSb having bulk-like properties. The reduction of the defects in the top InSb film has been observed with cross-sectional transmission electron microscopy and channeling Rutherford backscattering spectroscopy. The optimum substrate temperature for the primary InSb layer growth was 420 °C with an atomic flux ratio of Sb to In of 1.4 and a growth rate of 1 μm/h. The best 5-μm-thick InSb layers had x-ray rocking curve widths of 100 s, 77 K n-type carrier concentrations in the low 1015/cm3 range, and 77 K carrier mobilities greater than 105 cm2/V s. Mesa isolated photodiodes had carrier lifetimes of 20 ns, in comparison to 200 ns observed in bulk InSb having a similar carrier concentration. An unexplained, weak free-electron spin resonance transition has been observed in these films.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 69 (10), 7166-7172, 1991-05-15
AIP Publishing
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詳細情報 詳細情報について
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- CRID
- 1363670320264188800
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- DOI
- 10.1063/1.347608
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- ISSN
- 10897550
- 00218979
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- データソース種別
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- Crossref
