Electronic structures of organic/organic heterojunctions: From vacuum level alignment to Fermi level pinning
-
- J. X. Tang
- City University of Hong Kong Center Of Super-Diamond and Advanced Films (COSDAF), , Hong Kong SAR, China and Department of Physics and Materials Science, , Hong Kong SAR, China
-
- C. S. Lee
- City University of Hong Kong Center Of Super-Diamond and Advanced Films (COSDAF), , Hong Kong SAR, China and Department of Physics and Materials Science, , Hong Kong SAR, China
-
- S. T. Lee
- City University of Hong Kong Center Of Super-Diamond and Advanced Films (COSDAF), , Hong Kong SAR, China and Department of Physics and Materials Science, , Hong Kong SAR, China
書誌事項
- 公開日
- 2007-03-15
- DOI
-
- 10.1063/1.2710297
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>Electronic structures of organic/organic (O/O) heterojunctions have been studied by photoemission spectroscopy. We showed that vacuum level alignment is only valid for certain O/O heterojunctions rather than a general rule for organic junctions. The mode of energy level alignment is found to depend on the Fermi level position in the organic energy gap. In general, when the Fermi level is near the midgap position, vacuum level alignment at the O/O heterojunction is observed, whereas when the Fermi level is close to the edge of the lowest unoccupied or highest occupied molecular orbital level, Fermi level pinning accompanied by molecular orbital level bending is observed at the O/O heterojunction.</jats:p>
収録刊行物
-
- Journal of Applied Physics
-
Journal of Applied Physics 101 (6), 064504-, 2007-03-15
AIP Publishing
