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- S. Fafard
- Université de Sherbrooke 1 Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Institut Interdisciplinaire d'Innovation Technologique (3IT), , Sherbrooke, Quebec J1K OA5, Canada
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- M. C. A. York
- Université de Sherbrooke 1 Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Institut Interdisciplinaire d'Innovation Technologique (3IT), , Sherbrooke, Quebec J1K OA5, Canada
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- F. Proulx
- Université de Sherbrooke 1 Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Institut Interdisciplinaire d'Innovation Technologique (3IT), , Sherbrooke, Quebec J1K OA5, Canada
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- C. E. Valdivia
- University of Ottawa 3 Department of Electrical Engineering and Computer Science, , Ontario, K1N 6N5, Canada
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- M. M. Wilkins
- University of Ottawa 3 Department of Electrical Engineering and Computer Science, , Ontario, K1N 6N5, Canada
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- R. Arès
- Université de Sherbrooke 1 Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Institut Interdisciplinaire d'Innovation Technologique (3IT), , Sherbrooke, Quebec J1K OA5, Canada
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- V. Aimez
- Université de Sherbrooke 1 Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Institut Interdisciplinaire d'Innovation Technologique (3IT), , Sherbrooke, Quebec J1K OA5, Canada
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- K. Hinzer
- University of Ottawa 3 Department of Electrical Engineering and Computer Science, , Ontario, K1N 6N5, Canada
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- D. P. Masson
- Azastra Opto Inc. 2 , 6090 Longleaf Dr. Suite 100, Ottawa, Ontario K1W 1G3, Canada
抄録
<jats:p>Optical to electrical power converting semiconductor devices were achieved with breakthrough performance by designing a Vertical Epitaxial Heterostructure Architecture. The devices are featuring modeled and measured conversion efficiencies greater than 65%. The ultrahigh conversion efficiencies were obtained by monolithically integrating several thin GaAs photovoltaic junctions tailored with submicron absorption thicknesses and grown in a single crystal by epitaxy. The heterostructures that were engineered with a number N of such ultrathin junctions yielded an optimal external quantum efficiencies approaching 100%/N. The heterostructures are capable of output voltages that are multiple times larger than the corresponding photovoltage of the input light. The individual nanoscale junctions are each generating up to ∼1.2 V of output voltage when illuminated in the infrared. We compare the optoelectronic properties of phototransducers prepared with designs having 5 to 12 junctions and that are exhibiting voltage outputs between >5 V and >14 V.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 108 (7), 2016-02-15
AIP Publishing