Resonant excitation of visible photoluminescence from an erbium-oxide overlayer on Si

DOI PDF 被引用文献2件
  • A. Kasuya
    Institute for Materials Research, Tohoku University, Sendai 980-77, Japan
  • M. Suezawa
    Institute for Materials Research, Tohoku University, Sendai 980-77, Japan

書誌事項

公開日
1997-11-10
DOI
  • 10.1063/1.120119
公開者
AIP Publishing

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説明

<jats:p>A thin Er2O3 layer grown on a Si surface by vapor doping of Er exhibits intense photoluminescence in the green and red regions excited by laser beams in the 800 nm and 450–490 nm ranges. These intense light emissions take place via resonant two or one step photoexcitations of the 4f levels in Er3+ ions. Our sample fabrication procedure is integrated circuit compatible and produces Er2O3 layers of excellent homogeneity and quality as demonstrated in the optical measurements.</jats:p>

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