Submicron periodic poling and chemical patterning of GaN

S. Pezzagna, P. Vennéguès, N. Grandjean, A. D. Wieck, J. Massies

doi:10.1063/1.2009839

Submicron periodic poling and chemical patterning of GaN

DOI PDF 被引用文献1件

S. Pezzagna

Centre National de la Recherche Scientifique Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, , Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
P. Vennéguès

Centre National de la Recherche Scientifique Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, , Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
N. Grandjean

Centre National de la Recherche Scientifique Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, , Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
A. D. Wieck

Centre National de la Recherche Scientifique Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, , Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France
J. Massies

Centre National de la Recherche Scientifique Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, , Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne, France

書誌事項

公開日: 2005-08-05

DOI

10.1063/1.2009839

公開者: AIP Publishing

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説明

<jats:p>Periodic polarity (PePo) GaN films are grown by molecular-beam epitaxy. A high Mg doping is used to reverse the film polarity from Ga to N. An etching step is then performed to define the PePo pattern. Ultrasharp inversion domain boundaries between Ga- and N-polar domains are shown by transmission electron microscopy. Moreover, it is demonstrated that three-dimensional (3D) patterned Ga-polarity GaN films can be obtained from these PePo samples by a simple wet chemical etching procedure. When combined with a focused ion beam (FIB) to define the initial PePo template, periodic poling as well as chemical 3D patterning is demonstrated down to the nanometer scale.</jats:p>