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- A. Íñiguez-de-la-Torre
- Universidad de Salamanca 1 Departamento de Física Aplicada, , Plaza de la Merced s/n, 37008 Salamanca, Spain
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- I. Íñiguez-de-la-Torre
- Universidad de Salamanca 1 Departamento de Física Aplicada, , Plaza de la Merced s/n, 37008 Salamanca, Spain
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- J. Mateos
- Universidad de Salamanca 1 Departamento de Física Aplicada, , Plaza de la Merced s/n, 37008 Salamanca, Spain
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- T. González
- Universidad de Salamanca 1 Departamento de Física Aplicada, , Plaza de la Merced s/n, 37008 Salamanca, Spain
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- P. Sangaré
- Institut d’Electronique de Microélectronique et de Nanotechnologie (IEMN) 2 , UMR CNRS 8520, Université de Lille 1, Avenue Poincaré BP60069, 59652 Villeneuve d’Ascq CEDEX, France
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- M. Faucher
- Institut d’Electronique de Microélectronique et de Nanotechnologie (IEMN) 2 , UMR CNRS 8520, Université de Lille 1, Avenue Poincaré BP60069, 59652 Villeneuve d’Ascq CEDEX, France
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- B. Grimbert
- Institut d’Electronique de Microélectronique et de Nanotechnologie (IEMN) 2 , UMR CNRS 8520, Université de Lille 1, Avenue Poincaré BP60069, 59652 Villeneuve d’Ascq CEDEX, France
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- V. Brandli
- Institut d’Electronique de Microélectronique et de Nanotechnologie (IEMN) 2 , UMR CNRS 8520, Université de Lille 1, Avenue Poincaré BP60069, 59652 Villeneuve d’Ascq CEDEX, France
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- G. Ducournau
- Institut d’Electronique de Microélectronique et de Nanotechnologie (IEMN) 2 , UMR CNRS 8520, Université de Lille 1, Avenue Poincaré BP60069, 59652 Villeneuve d’Ascq CEDEX, France
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- C. Gaquière
- Institut d’Electronique de Microélectronique et de Nanotechnologie (IEMN) 2 , UMR CNRS 8520, Université de Lille 1, Avenue Poincaré BP60069, 59652 Villeneuve d’Ascq CEDEX, France
書誌事項
- 公開日
- 2012-06-01
- DOI
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- 10.1063/1.4724350
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>A detailed study of GaN-based planar asymmetric nanodiodes, promising devices for the fabrication of room temperature THz Gunn oscillators, is reported. By using Monte Carlo simulations, an analysis of the static I-V curves and the time-domain evolution of the current obtained when varying some simulation parameters in the diodes has been made. Oscillation frequencies of hundreds of GHz are predicted by the simulations in diodes with micrometric channel lengths. Following simulation guidelines, a first batch of diodes was fabricated. It was found that surface charge depletion effects are stronger than expected and inhibit the onset of the oscillations. Indeed, a simple standard constant surface charge model is not able to reproduce experimental measurements and a self-consistent model must be included in the simulations. Using a self-consistent model, it was found that to achieve oscillations, wider channels and improved geometries are necessary.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 111 (11), 113705-1-, 2012-06-01
AIP Publishing