Exciton related stimulated emission in ZnO polycrystalline thin film deposited by filtered cathodic vacuum arc technique
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- X. H. Zhang
- Institute of Materials Research and Engineering , 3 Research Link, Singapore 117602, Singapore
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- A. M. Yong
- Institute of Materials Research and Engineering , 3 Research Link, Singapore 117602, Singapore
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- H. D. Li
- Nanyang Technological Univeristy School of Electrical and Electronic Engineering, , Nanyang Avenue, Singapore 639798, Singapore
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- S. J. Chua
- Institute of Materials Research and Engineering , 3 Research Link, Singapore 117602, Singapore
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- S. P. Lau
- Nanyang Technological Univeristy School of Electrical and Electronic Engineering, , Nanyang Avenue, Singapore 639798, Singapore
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- S. F. Yu
- Nanyang Technological Univeristy School of Electrical and Electronic Engineering, , Nanyang Avenue, Singapore 639798, Singapore
書誌事項
- 公開日
- 2006-05-08
- DOI
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- 10.1063/1.2202728
- 公開者
- AIP Publishing
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説明
<jats:p>Random lasing was observed from ZnO polycrystalline thin film deposited by filtered cathodic vacuum arc technique. It is found that the random lasing action results from exciton-exciton scattering process when the excitation intensity is low. However, with increasing excitation intensity, the well-resolved discrete lasing modes evolve into broad stimulated emission band due to electron-hole plasma formation when the photogenerated exciton density exceeds the Mott density. The short spontaneous emission decay time measured at low temperature suggests that the radiative recombination rate is enhanced by the nanosized ZnO grains in the polycrystalline film through exciton-light coupling.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 88 (19), 191112-, 2006-05-08
AIP Publishing
