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Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face
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- Hiroshi Yano
- Nara Institute of Science and Technology
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- Toshio Hirao
- Japan Atomic Energy Agency
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- Tsunenobu Kimoto
- Kyoto University
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- Hiroyuki Matsunami
- Kyoto University
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- Katsunori Asano
- Kansai Electric Power Co., Inc.
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- Yoshitaka Sugawara
- Kansai Electric Power Co., Inc.
Journal
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- Materials Science Forum
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Materials Science Forum 338-342 1105-1108, 2000-05-10
Trans Tech Publications, Ltd.
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Details 詳細情報について
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- CRID
- 1363670320758436608
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- ISSN
- 16629752
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- Data Source
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- Crossref
- OpenAIRE