Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs

詳細情報 詳細情報について

• CRID

  1363670320882593792

• DOI

  10.1186/s11671-016-1642-z

• ISSN

  1556276X

  19317573

• Web Site

  http://link.springer.com/content/pdf/10.1186/s11671-016-1642-z.pdf

  http://link.springer.com/article/10.1186/s11671-016-1642-z/fulltext.html

• データソース種別

  • Crossref