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- G. Brammertz
- Interuniversity Microelectronics Center (IMEC vzw) , Kapeldreef 75, B-3001 Leuven, Belgium
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- H.-C. Lin
- Interuniversity Microelectronics Center (IMEC vzw) , Kapeldreef 75, B-3001 Leuven, Belgium
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- K. Martens
- Interuniversity Microelectronics Center (IMEC vzw) , Kapeldreef 75, B-3001 Leuven, Belgium
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- D. Mercier
- Interuniversity Microelectronics Center (IMEC vzw) , Kapeldreef 75, B-3001 Leuven, Belgium
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- S. Sioncke
- Interuniversity Microelectronics Center (IMEC vzw) , Kapeldreef 75, B-3001 Leuven, Belgium
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- A. Delabie
- Interuniversity Microelectronics Center (IMEC vzw) , Kapeldreef 75, B-3001 Leuven, Belgium
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- W. E. Wang
- Interuniversity Microelectronics Center (IMEC vzw) , Kapeldreef 75, B-3001 Leuven, Belgium
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- M. Caymax
- Interuniversity Microelectronics Center (IMEC vzw) , Kapeldreef 75, B-3001 Leuven, Belgium
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- M. Meuris
- Interuniversity Microelectronics Center (IMEC vzw) , Kapeldreef 75, B-3001 Leuven, Belgium
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- M. Heyns
- Interuniversity Microelectronics Center (IMEC vzw) , Kapeldreef 75, B-3001 Leuven, Belgium
書誌事項
- 公開日
- 2008-11-03
- DOI
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- 10.1063/1.3005172
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>The authors apply the conductance method at 25 and 150°C to GaAs–Al2O3 metal-oxide-semiconductor devices in order to derive the interface state distribution (Dit) as a function of energy in the bandgap. The Dit is governed by two large interface state peaks at midgap energies, in agreement with the unified defect model. S-passivation and forming gas annealing reduce the Dit in large parts of the bandgap, mainly close to the valence band, reducing noticeably the room temperature frequency dispersion. However the midgap interface state peaks are not affected by these treatments, such that Fermi level pinning at midgap energies remains.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 93 (18), 2008-11-03
AIP Publishing