Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD

詳細情報 詳細情報について

• CRID

  1363670320999477248

• DOI

  10.1007/s10853-015-8893-4

• ISSN

  15734803

  00222461

• Web Site

  http://link.springer.com/content/pdf/10.1007/s10853-015-8893-4.pdf

  http://link.springer.com/article/10.1007/s10853-015-8893-4/fulltext.html

  http://link.springer.com/content/pdf/10.1007/s10853-015-8893-4

• データソース種別

  • Crossref