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- S. Nazir
- KAUST, Physical Science and Engineering Division , Thuwal 23955-6900, Kingdom of Saudi Arabia
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- M. Upadhyay Kahaly
- KAUST, Physical Science and Engineering Division , Thuwal 23955-6900, Kingdom of Saudi Arabia
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- U. Schwingenschlögl
- KAUST, Physical Science and Engineering Division , Thuwal 23955-6900, Kingdom of Saudi Arabia
書誌事項
- 公開日
- 2012-05-14
- DOI
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- 10.1063/1.4719106
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>A theoretical study of the two-dimensional hole gas at the (AgO)−/(TiO2)0 p-type interface in the AgTaO3/SrTiO3 (001) heterostructure is presented. The Ag 4d states strongly hybridize with the O 2p states and contribute to the hole gas. It is demonstrated that the holes are confined to an ultra thin layer (∼4.9Å) with a considerable carrier density of ∼1014cm-2. We estimate a hole mobility of 18.6 cm2 V−1 s−1, which is high enough to enable device applications.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 100 (20), 2012-05-14
AIP Publishing