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- V. V. Afanas’ev
- University of Leuven Department of Physics, , Celestijnenlaan 200 D, 3001 Leuven, Belgium
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- A. Stesmans
- University of Leuven Department of Physics, , Celestijnenlaan 200 D, 3001 Leuven, Belgium
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- R. Droopad
- Freescale Semiconductor, Inc. , 2100 East Elliot Road, Tempe, Arizona 85284
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- M. Passlack
- Freescale Semiconductor, Inc. , 2100 East Elliot Road, Tempe, Arizona 85284
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- L. F. Edge
- Pennsylvania State University Department of Materials Science and Engineering, , University Park, Pennsylvania 16802-5005
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- D. G. Schlom
- Pennsylvania State University Department of Materials Science and Engineering, , University Park, Pennsylvania 16802-5005
書誌事項
- 公開日
- 2006-08-28
- DOI
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- 10.1063/1.2338893
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>Electron energy barriers at the interfaces of GaAs(100) with Gd2O3 appear to be insensitive to the Fermi level pinning indicating that charges at interface states are of marginal importance for the band alignment at semiconductor/insulator interfaces. The inferred conduction band offset of 1.6±0.1eV for GaAs(100)∕Gd2O3 is close to that measured at the GaAs(100)∕LaAlO3 interface which is consistent with the 5.8 and 5.7eV wide band gaps of these two insulators. However, the defects revealed by photoionization measurements exhibit a distinctly different in-depth distribution. In GaAs∕LaAlO3 most of the traps are located close to the semiconductor surface, while in GaAs∕Gd2O3 case they are found distributed across the entire oxide layer.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 89 (9), 092103-, 2006-08-28
AIP Publishing