Tunable electronic structures of graphene/boron nitride heterobilayers

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  • Yingcai Fan
    Shandong University School of Physics and State Key Laboratory of Crystal Materials, , Jinan 250100, People's Republic of China
  • Mingwen Zhao
    Shandong University School of Physics and State Key Laboratory of Crystal Materials, , Jinan 250100, People's Republic of China
  • Zhenhai Wang
    Shandong University School of Physics and State Key Laboratory of Crystal Materials, , Jinan 250100, People's Republic of China
  • Xuejuan Zhang
    Shandong University School of Physics and State Key Laboratory of Crystal Materials, , Jinan 250100, People's Republic of China
  • Hongyu Zhang
    Shandong University School of Physics and State Key Laboratory of Crystal Materials, , Jinan 250100, People's Republic of China

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<jats:p>Using first-principles calculations, we show that the band gap and electron effective mass (EEM) of graphene/boron nitride heterobilayers (C/BN HBLs) can be modulated effectively by tuning the interlayer spacing and stacking arrangement. The HBLs have smaller EEM than that of graphene bilayers (GBLs), and thus higher carrier mobility. For specific stacking patterns, the nearly linear band dispersion relation of graphene monolayer can be preserved in the HBLs accompanied by a small band-gap opening. The tunable band gap and high carrier mobility of these C/BN HBLs are promising for building high-performance nanodevices.</jats:p>

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