The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN- and AlN-layers grown by molecular beam epitaxy on Si(1 1 1)
書誌事項
- 公開日
- 1998-01
- 権利情報
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- https://www.elsevier.com/tdm/userlicense/1.0/
- DOI
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- 10.1016/s0022-0248(97)00386-2
- 公開者
- Elsevier BV
この論文をさがす
収録刊行物
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- Journal of Crystal Growth
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Journal of Crystal Growth 183 (1-2), 23-30, 1998-01
Elsevier BV