Dislocation mediated surface morphology of GaN

DOI PDF 被引用文献32件
  • B. Heying
    Department of Materials, University of California-Santa Barbara, Santa Barbara, California 93106
  • E. J. Tarsa
    Department of Materials, University of California-Santa Barbara, Santa Barbara, California 93106
  • C. R. Elsass
    Department of Materials, University of California-Santa Barbara, Santa Barbara, California 93106
  • P. Fini
    Department of Materials, University of California-Santa Barbara, Santa Barbara, California 93106
  • S. P. DenBaars
    Department of Materials, University of California-Santa Barbara, Santa Barbara, California 93106
  • J. S. Speck
    Department of Materials, University of California-Santa Barbara, Santa Barbara, California 93106

書誌事項

公開日
1999-05-01
DOI
  • 10.1063/1.370150
公開者
AIP Publishing

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<jats:p>The surfaces of GaN films grown by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were studied using atomic force microscopy (AFM). Due to the high dislocation densities in the films (108 cm−2), the typical surface morphologies of layers grown by both techniques were dominated by three dislocation mediated surface structures—pinned steps, spiral hillocks, and surface depressions. The characteristics of these surface structures were found to depend on growth technique (MOCVD vs MBE) and the group-III to group-V ratio used in the growth of MBE GaN films. Pinned steps, created by the intersections of mixed character dislocations with the free surface, were found on all GaN films. The pinned steps were observed to be predominantly straight on the MOCVD GaN and curved into spiral hillock formations on the MBE GaN. Spiral growth hillocks form when pinned steps grow outward and around the dislocation under step-flow growth conditions. The tightness of the spiral hillocks on MBE GaN surfaces was found to increases with III/V ratio. Surface depressions, caused by the high strain-energy density near dislocations, were also observed on the surfaces of the GaN films. Two characteristic depression sizes were found on all MOCVD GaN films whereas depressions were observed only on MBE GaN films grown with low III/V ratios. These observations are explained using theories developed by Burton, Cabrera, and Frank [Philos. Trans. R. Soc. London, Ser. A 243, 299 (1951)] and Frank [Acta Crystallogr. 4, 497 (1951)].</jats:p>

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