Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment
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- Jin-Seong Park
- Samsung SDI Co., Ltd Corporate R&D Center, , 428-5, Gongse-Dong, Kiheung-Gu, Yongin-Si, Gyeonggi-Do 449-902, Korea
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- Jae Kyeong Jeong
- Samsung SDI Co., Ltd Corporate R&D Center, , 428-5, Gongse-Dong, Kiheung-Gu, Yongin-Si, Gyeonggi-Do 449-902, Korea
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- Yeon-Gon Mo
- Samsung SDI Co., Ltd Corporate R&D Center, , 428-5, Gongse-Dong, Kiheung-Gu, Yongin-Si, Gyeonggi-Do 449-902, Korea
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- Hye Dong Kim
- Samsung SDI Co., Ltd Corporate R&D Center, , 428-5, Gongse-Dong, Kiheung-Gu, Yongin-Si, Gyeonggi-Do 449-902, Korea
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- Sun-Il Kim
- Samsung Advanced Institute of Technology , Yongin-Si, Gyeonggi-Do 449-712, Korea
書誌事項
- 公開日
- 2007-06-25
- DOI
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- 10.1063/1.2753107
- 公開者
- AIP Publishing
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説明
<jats:p>The effect of Ar plasma treatment on amorphous indium gallium zinc oxide (a-IGZO) thin films was investigated. The net electron carrier concentration (1020–1021cm−3) of the a-IGZO thin films dramatically increased upon their exposure to the Ar plasma compared to that (1014cm−3) of the as-deposited thin film. The authors attempted to reduce the contact resistance between the Pt∕Ti (source/drain electrode) and a-IGZO (channel) by using the Ar plasma treatment. Without the treatment, the a-IGZO thin film transistors (TFTs) with W∕L=50∕4μm exhibited a moderate field-effect mobility (μFE) of 3.3cm2∕Vs, subthreshold gate swing (S) of 0.25V∕decade, and Ion∕off ratio of 4×107. The device performance of the a-IGZO TFTs was significantly improved by the Ar plasma treatment. As a result, an excellent S value of 0.19V∕decade and high Ion∕off ratio of 1×108, as well as a high μFE of 9.1cm2∕Vs, were achieved for the treated a-IGZO TFTs.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 90 (26), 262106-, 2007-06-25
AIP Publishing