Self-termination of contactless photo-electrochemical (PEC) etching on aluminum gallium nitride/gallium nitride heterostructures
この論文をさがす
説明
<jats:title>Abstract</jats:title> <jats:p>Contactless photo-electrochemical (PEC) etching was successfully demonstrated on AlGaN/GaN heterostructures using a K<jats:sub>2</jats:sub>S<jats:sub>2</jats:sub>O<jats:sub>8</jats:sub> aqueous solution. The etching was conducted by a simple method such as just dipping the sample with Ti-cathode pads into the solution under UVC illumination. The etching morphology of the AlGaN surface was very smooth with an root mean square roughness of 0.24 nm. The etching was self-terminated in the AlGaN layer, whose residual thickness was 5 nm uniformly throughout the etched region. These contactless PEC etching features are promising for the fabrication of recessed-gate AlGaN/GaN high-electron-mobility transistors with high recessed-gate thickness reproducibility.</jats:p>
収録刊行物
-
- Applied Physics Express
-
Applied Physics Express 13 (2), 026508-, 2020-02-01
IOP Publishing
- Tweet
キーワード
詳細情報 詳細情報について
-
- CRID
- 1363946394089563776
-
- ISSN
- 18820786
- 18820778
- https://id.crossref.org/issn/18820786
-
- HANDLE
- 2115/79172
-
- 資料種別
- journal article
-
- データソース種別
-
- Crossref
- KAKEN
- OpenAIRE
