Synchrotron radiation study of VO2 crystal film epitaxial growth on sapphire substrate with intrinsic multi-domains
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- L. L. Fan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China 1 , Hefei 230029, People's Republic of China
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- Y. F. Wu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China 1 , Hefei 230029, People's Republic of China
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- C. Si
- Institute of High Energy Physics, Chinese Academy of Science 2 , Beijing 100049, People's Republic of China
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- G. Q. Pan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China 1 , Hefei 230029, People's Republic of China
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- C. W. Zou
- National Synchrotron Radiation Laboratory, University of Science and Technology of China 1 , Hefei 230029, People's Republic of China
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- Z. Y. Wu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China 1 , Hefei 230029, People's Republic of China
書誌事項
- 公開日
- 2013-01-07
- DOI
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- 10.1063/1.4775580
- 公開者
- AIP Publishing
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説明
<jats:p>The growth behavior of VO2 crystal film deposited on Al2O3 (0001) monocrystalline substrate by pulsed laser deposition was investigated by high-resolution synchrotron radiation X-ray diffraction (XRD). φ-scan XRD confirmed the in-plane epitaxial matching relation. Furthermore, fine structures observed in the φ-scan indicated that each main peak contained two additional satellites in both the inclined (220) plane and some other vertical planes. A growth model for this observation was proposed based on the intrinsic multi-domain growth of the VO2 crystal at the interface. This observation will give some insights in VO2 epitaxial growth on the hexagonal substrate system.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 102 (1), 11604-, 2013-01-07
AIP Publishing