Structural changes in chemical solution deposited lanthanum doped bismuth ferrite thin films
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- V. R. Singh
- Indian Institute of Technology 1 Materials and Metallurgical Engineering, , Kanpur 208016, India
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- A. Garg
- Indian Institute of Technology 1 Materials and Metallurgical Engineering, , Kanpur 208016, India
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- D. C. Agrawal
- Indian Institute of Technology 2 Materials Science Programme, , Kanpur 208016, India
書誌事項
- 公開日
- 2008-04-14
- DOI
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- 10.1063/1.2901017
- 公開者
- AIP Publishing
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説明
<jats:p>Here, we report on the lanthanum (La) doping induced structural changes in chemical solution grown Bi1−xLaxFeO3 (0.0⩽x⩾0.30) thin films on indium tin oxide coated glass substrates and influence on film’s properties. Films show gradual structural changes from rhombohedral towards a pseudocubic structure as the La content increases, also evident from changes in the lattice constant and disappearance of peak splitting upon increasing the doping level. This was also accompanied by an increase in the dielectric constant, magnetization and a marginal decrease in the leakage current density up to x=0.20 followed by a reverse trend at higher doping levels.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 92 (15), 152905-, 2008-04-14
AIP Publishing