High Responsivity and Gate Tunable Graphene‐MoS<sub>2</sub> Hybrid Phototransistor
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- Hua Xu
- Center for Nanochemistry Beijing National Laboratory for Molecular Sciences Key Laboratory for the Physics and Chemistry of Nanodevices State Key Laboratory for Structural Chemistry of Unstable and Stable Species College of Chemistry and Molecular Engineering Peking University Beijing 100871 P. R. China
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- Juanxia Wu
- Center for Nanochemistry Beijing National Laboratory for Molecular Sciences Key Laboratory for the Physics and Chemistry of Nanodevices State Key Laboratory for Structural Chemistry of Unstable and Stable Species College of Chemistry and Molecular Engineering Peking University Beijing 100871 P. R. China
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- Qingliang Feng
- Center for Nanochemistry Beijing National Laboratory for Molecular Sciences Key Laboratory for the Physics and Chemistry of Nanodevices State Key Laboratory for Structural Chemistry of Unstable and Stable Species College of Chemistry and Molecular Engineering Peking University Beijing 100871 P. R. China
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- Nannan Mao
- Center for Nanochemistry Beijing National Laboratory for Molecular Sciences Key Laboratory for the Physics and Chemistry of Nanodevices State Key Laboratory for Structural Chemistry of Unstable and Stable Species College of Chemistry and Molecular Engineering Peking University Beijing 100871 P. R. China
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- Chunming Wang
- College of Chemistry and Chemical Engineering Lanzhou University Lanzhou 730000 P. R. China
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- Jin Zhang
- Center for Nanochemistry Beijing National Laboratory for Molecular Sciences Key Laboratory for the Physics and Chemistry of Nanodevices State Key Laboratory for Structural Chemistry of Unstable and Stable Species College of Chemistry and Molecular Engineering Peking University Beijing 100871 P. R. China
説明
<jats:p>A 2D atomic‐layer‐thickness phototransistor based on a graphene‐MoS<jats:sub>2</jats:sub> bybrid device is constructed with a photoresponse much larger than that of individual graphene or MoS<jats:sub>2</jats:sub> based phototransistors. Strong and selective light absorption in the MoS<jats:sub>2</jats:sub> layer creates electric charges that are transferred to graphene layers derived by a build‐in electrical field, where they recirculate many times due to the high carrier mobility of graphene. Gate tunable Fermi level in graphene layer allows the responsivity of this hybrid phototransistor to be continuously tuned from 0 to about 10<jats:sup>4</jats:sup> mA/W by the gate voltage. Furthermore, large scale, flexible, and transparent 2D phototransistors with high responsivity are constructed from the CVD‐grown graphene and MoS<jats:sub>2</jats:sub> flakes. The high responsivity, gate‐tunable sensitivity, wavelength selectivity, and compatibility with current circuit technologies of this type device give it great potential for future application in integrated nano‐optoelectronic systems.</jats:p>
収録刊行物
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- Small
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Small 10 (11), 2300-2306, 2014-03-24
Wiley
