Impact of total ionizing dose irradiation on Pt/SrBi2Ta2O9/HfTaO/Si memory capacitors

  • S. A. Yan
    Xiangtan University 1 School of Materials Science and Engineering, , Xiangtan 411105, China
  • W. Zhao
    Northwest Institute of Nuclear Technology 4 , Xi'an, Shanxi 710024, China
  • H. X. Guo
    Northwest Institute of Nuclear Technology 4 , Xi'an, Shanxi 710024, China
  • Y. Xiong
    Xiangtan University 5 The School of Mathematics and Computational Science, , Xiangtan, Hunan 411105, China
  • M. H. Tang
    Xiangtan University 1 School of Materials Science and Engineering, , Xiangtan 411105, China
  • Z. Li
    Xiangtan University 1 School of Materials Science and Engineering, , Xiangtan 411105, China
  • Y. G. Xiao
    Xiangtan University 1 School of Materials Science and Engineering, , Xiangtan 411105, China
  • W. L. Zhang
    Xiangtan University 1 School of Materials Science and Engineering, , Xiangtan 411105, China
  • H. Ding
    Xiangtan University 1 School of Materials Science and Engineering, , Xiangtan 411105, China
  • J. W. Chen
    Xiangtan University 1 School of Materials Science and Engineering, , Xiangtan 411105, China
  • Y. C. Zhou
    Xiangtan University 1 School of Materials Science and Engineering, , Xiangtan 411105, China

書誌事項

公開日
2015-01-05
DOI
  • 10.1063/1.4905354
公開者
AIP Publishing

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説明

<jats:p>In this work, metal-ferroelectric-insulator-semiconductor (MFIS) structure capacitors with SrBi2Ta2O9 (300 nm) as ferroelectric thin film and HfTaO (6 nm, 8 nm, 10 nm, and 12 nm) as insulating buffer layer were proposed and investigated. The prepared capacitors were fabricated and characterized before radiation and then subjected to 60Co gamma irradiation in steps of two dose levels. Significant irradiation-induced degradation of the electrical characteristics was observed. The radiation experimental results indicated that stability and reliability of as-fabricated MFIS capacitors for nonvolatile memory applications could become uncontrollable under strong irradiation dose and/or long irradiation time.</jats:p>

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