Experimental evidence for quantum mechanical narrow channel effect in ultra-narrow MOSFET's
書誌事項
- 公開日
- 2000-08
- 権利情報
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- https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
- DOI
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- 10.1109/55.852962
- 公開者
- Institute of Electrical and Electronics Engineers (IEEE)
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説明
The authors describe a new narrow channel effect by quantum mechanical effects in ultra-narrow MOSFET's. Threshold voltage increase is observed at room temperature in ultra-narrow MOSFET's whose channel width is less than 10 nm. This result is in excellent agreement with simulation that takes account of quantum confinement in the silicon narrow channel, indicating that the increase in threshold voltage is caused by the quantum mechanical narrow channel effect.
収録刊行物
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- IEEE Electron Device Letters
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IEEE Electron Device Letters 21 (8), 396-398, 2000-08
Institute of Electrical and Electronics Engineers (IEEE)
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詳細情報 詳細情報について
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- CRID
- 1363951794382225152
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- NII論文ID
- 30019829556
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- ISSN
- 15580563
- 07413106
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