A Layer-by-Layer Growth Strategy for Large-Size InP/ZnSe/ZnS Core–Shell Quantum Dots Enabling High-Efficiency Light-Emitting Diodes
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- Fan Cao
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, P. R. China
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- Sheng Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, P. R. China
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- Feijiu Wang
- Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
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- Qianqian Wu
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, P. R. China
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- Dewei Zhao
- Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606, United States
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- Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai 200072, P. R. China
説明
Shell is of great significance to the enhancement in the photoluminescence quantum yield (PLQY) and stability of core–shell-type quantum dots (QDs). InP/ZnS core–shell QDs without intrinsic toxicity have shown huge potential as a replacement for the widely used cadmium-containing QDs; however, it is still challenging to control the growth of InP-based core–shell QDs due to the lattice mismatch between the InP core and ZnS shell. Here, we report on the synthesis of ∼15-nm-size InP/ZnSe/ZnS QDs with a thick ZnS outer shell by a layer-by-layer shell growth strategy. The ZnS shell was prepared by a circularly gradient temperature rise and long reaction procedure in each step, which not only ensures relatively low precursor concentration preventing the anisotropic growth of QDs but also allows the low-reactivity source to be decomposed sufficiently to achieve layer-by-layer growth of a thick ZnS shell. The resulting QDs show the highest PLQY of 73%, narrow emission line width of up to 40 nm, wide spectrum tuna...
収録刊行物
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- Chemistry of Materials
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Chemistry of Materials 30 (21), 8002-8007, 2018-10-18
American Chemical Society (ACS)
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詳細情報 詳細情報について
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- CRID
- 1363951794571346560
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- ISSN
- 15205002
- 08974756
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- データソース種別
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- Crossref
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