Short-period superlattices of AlN∕Al0.08Ga0.92N grown on AlN substrates

DOI PDF 4 Citations
  • S. A. Nikishin
    Department of Electrical and Computer Engineering and Nano Tech Center , Texas Tech University, Lubbock, Texas 79409-3102
  • B. A. Borisov
    Department of Electrical and Computer Engineering and Nano Tech Center , Texas Tech University, Lubbock, Texas 79409-3102
  • A. Chandolu
    Department of Electrical and Computer Engineering and Nano Tech Center , Texas Tech University, Lubbock, Texas 79409-3102
  • V. V. Kuryatkov
    Department of Electrical and Computer Engineering and Nano Tech Center , Texas Tech University, Lubbock, Texas 79409-3102
  • H. Temkin
    Department of Electrical and Computer Engineering and Nano Tech Center , Texas Tech University, Lubbock, Texas 79409-3102
  • M. Holtz
    Nano Tech Center/Department of Physics , Texas Tech University, Lubbock, Texas 79409
  • E. N. Mokhov
    The Fox Group Inc. , 1154 Stealth Street, Livermore, California 94550
  • Yu. Makarov
    The Fox Group Inc. , 1154 Stealth Street, Livermore, California 94550
  • H. Helava
    The Fox Group Inc. , 1154 Stealth Street, Livermore, California 94550

Description

<jats:p>High-quality short-period superlattices of AlN∕Al0.08Ga0.92N have been grown by gas-source molecular-beam epitaxy with ammonia on Al face of AlN (0001) substrates. A significant reduction was achieved in the dislocation density, down to 3×108cm−2. Complete removal of residual Al2O3 surface oxide is needed in order to obtain low dislocation density in homoepitaxy on AlN. We show that the presence of Al2O3 islands with the surface coverage as low as 0.2% results in increased dislocation density.</jats:p>

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