Understanding and controlling heteroepitaxy with the kinetic Wulff plot: A case study with GaN
-
- Qian Sun
- Yale University 1 Department of Electrical Engineering, , New Haven, Connecticut 06520, USA
-
- Christopher D. Yerino
- Yale University 1 Department of Electrical Engineering, , New Haven, Connecticut 06520, USA
-
- Benjamin Leung
- Yale University 1 Department of Electrical Engineering, , New Haven, Connecticut 06520, USA
-
- Jung Han
- Yale University 1 Department of Electrical Engineering, , New Haven, Connecticut 06520, USA
-
- Michael E. Coltrin
- Sandia National Laboratories 2 , Advances Materials Sciences Department, Albuquerque, New Mexico 87185, USA
説明
<jats:p>This work represents a comprehensive attempt to correlate the heteroepitaxial dynamics in experiments with fundamental principles in crystal growth using the kinetic Wulff plot (or v-plot). Selective area growth is employed to monitor the advances of convex and concave facets toward the construction of a comprehensive v-plot as a guidepost for GaN heteroepitaxy. A procedure is developed to apply the experimentally determined kinetic Wulff plots to the interpretation and the design of evolution dynamics in nucleation and island coalescence. This procedure offers a cohesive and rational model for GaN heteroepitaxy on polar, nonpolar, and semipolar orientations and is broadly extensible to other heteroepitaxial material systems. We demonstrate furthermore that the control of morphological evolution, based on invoking a detailed knowledge of the v-plots, holds a key to the reduction of microstructural defects through effective bending of dislocations and geometrical blocking of stacking faults, paving a way to device-quality heteroepitaxial nonpolar and semipolar GaN materials.</jats:p>
収録刊行物
-
- Journal of Applied Physics
-
Journal of Applied Physics 110 (5), 053517-, 2011-09-01
AIP Publishing
