A Universal Method of Producing Transparent Electrodes Using Wide‐Bandgap Materials

DOI Web Site Web Site 被引用文献1件
  • Hee‐Dong Kim
    School of Electrical Engineering Korea University Anam‐dong 5‐ga Seongbuk‐gu Seoul 136–701 Korea
  • Ho‐Myoung An
    School of Electrical Engineering Korea University Anam‐dong 5‐ga Seongbuk‐gu Seoul 136–701 Korea
  • Kyoung Heon Kim
    School of Electrical Engineering Korea University Anam‐dong 5‐ga Seongbuk‐gu Seoul 136–701 Korea
  • Su Jin Kim
    School of Electrical Engineering Korea University Anam‐dong 5‐ga Seongbuk‐gu Seoul 136–701 Korea
  • Chi Sun Kim
    Materals & Components Lab. LG Advanced Research Institute LG Electronics, Baumoe‐ro 38 Seocho‐gu Seoul 137–724 Republic of Korea
  • Jaehee Cho
    Department of Electrical Computer, and Systems Engineering Rensselaer Polytechnic Institute Troy NY 12180 USA
  • E. Fred Schubert
    Department of Electrical Computer, and Systems Engineering Rensselaer Polytechnic Institute Troy NY 12180 USA
  • Tae Geun Kim
    School of Electrical Engineering Korea University Anam‐dong 5‐ga Seongbuk‐gu Seoul 136–701 Korea

書誌事項

公開日
2013-11-11
権利情報
  • http://onlinelibrary.wiley.com/termsAndConditions#vor
DOI
  • 10.1002/adfm.201301697
公開者
Wiley

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説明

<jats:p>A UV light‐emitting diode (LED) is an eco‐friendly optical source with diverse applications. However, currently, the external quantum efficiency (EQE) of AlGaN‐based UV LEDs, particularly in the UV‐C band (<280 nm), is very low (<11%) mainly due to a large optical absorption via <jats:italic>p</jats:italic>‐GaN contact layers. A direct Ohmic contact to <jats:italic>p</jats:italic>‐AlGaN layers should be obtained using UV‐transparent conductive electrodes (TCEs) to solve this problem. A universal method is presented here to make such contact using electrical breakdown, with wide‐bandgap materials, to form conductive filaments (CFs), providing a current path between the TCEs and the <jats:italic>p</jats:italic>‐(Al)GaN layers. The contact resistance between the TCEs and the <jats:italic>p</jats:italic>‐GaN layers (or <jats:italic>p</jats:italic>‐AlGaN) is found to be on the order of 10<jats:sup>−5</jats:sup> Ω cm<jats:sup>2</jats:sup> (or 10<jats:sup>−3</jats:sup> Ω cm<jats:sup>2</jats:sup>), while optical transmittance is maintained up to 95% for AlN‐based TCEs at 250 nm. These findings could be a critical turning point delivering a breakthrough in UV LED technologies.</jats:p>

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