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- Franz P. G. Fengler
- NaMLab gGmbH Noethnitzer Str. 64 Dresden D‐01187 Germany
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- Milan Pešić
- NaMLab gGmbH Noethnitzer Str. 64 Dresden D‐01187 Germany
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- Sergej Starschich
- Institut für Werkstoffe der Elektrotechnik 2 RWTH Aachen Sommerfeldstr. 24 D‐52074 Aachen Germany
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- Theodor Schneller
- Institut für Werkstoffe der Elektrotechnik 2 RWTH Aachen Sommerfeldstr. 24 D‐52074 Aachen Germany
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- Christopher Künneth
- Department of Applied Sciences and Mechatronics Munich University of Applied Sciences Lothstr. 34 D‐80335 München Germany
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- Ulrich Böttger
- Institut für Werkstoffe der Elektrotechnik 2 RWTH Aachen Sommerfeldstr. 24 D‐52074 Aachen Germany
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- Halid Mulaosmanovic
- NaMLab gGmbH Noethnitzer Str. 64 Dresden D‐01187 Germany
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- Tony Schenk
- NaMLab gGmbH Noethnitzer Str. 64 Dresden D‐01187 Germany
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- Min Hyuk Park
- NaMLab gGmbH Noethnitzer Str. 64 Dresden D‐01187 Germany
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- Robin Nigon
- Laboratoire de Céramique EPFL, MX‐D Ecublens 1015 Lausanne Switzerland
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- Paul Muralt
- Laboratoire de Céramique EPFL, MX‐D Ecublens 1015 Lausanne Switzerland
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- Thomas Mikolajick
- Chair of Nanoelectronic Materials TU Dresden D‐01062 Dresden Germany
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- Uwe Schroeder
- NaMLab gGmbH Noethnitzer Str. 64 Dresden D‐01187 Germany
書誌事項
- 公開日
- 2017-03-08
- 権利情報
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- http://onlinelibrary.wiley.com/termsAndConditions#vor
- DOI
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- 10.1002/aelm.201600505
- 公開者
- Wiley
この論文をさがす
説明
<jats:p>Even though many studies on the field cycling behavior of ferroelectric hafnium oxide have recently been published, the issue is still not fully understood. The initial increase of polarization during first cycles is explained by different theoretical and empirical approaches. Field‐induced phase changes as well as oxygen vacancy diffusion from interfacial layers toward the bulk are discussed. Trapped charges as well as the mentioned oxygen vacancy diffusion might cause a shift of the hysteresis along the voltage axis called imprint. Even though various studies connect this effect to charge diffusion with progression of cycling, a final experimental proof for the origin of wake‐up and imprint is still missing. Based on the comprehensive comparative study of hafnia–zirconia and iron‐doped lead zirconate titanate ferroelectrics, it is verified that the diffusion of oxygen vacancies is the main cause for both imprint and wake‐up. Moreover, it is shown that a local seed inhibition of ferroelectric domains is most likely responsible for the reduced ferroelectric response in pristine state.</jats:p>
収録刊行物
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- Advanced Electronic Materials
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Advanced Electronic Materials 3 (4), 2017-03-08
Wiley