Room temperature growth of semipolar AlN (1$ \bar 1 $02) films on ZnO (1$ \bar 1 $02) substrates by pulsed laser deposition

<jats:title>Abstract</jats:title><jats:p>Semipolar AlN <jats:styled-content>$(1 \bar 102) $<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/tex2gif-ueqn-3.gif" xlink:title="equation image" /></jats:styled-content> films have been prepared on ZnO <jats:styled-content>$(1 \bar 102) $<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/tex2gif-ueqn-4.gif" xlink:title="equation image" /></jats:styled-content> substrates by employing room temperature (RT) grown AlN layers using pulsed laser deposition. The use of the RT‐AlN layer suppresses the interfacial reactions between AlN and ZnO and makes it possible to take full advantage of the nearly lattice matched wurtzite substrates. The FWHM values of XRCs of semipolar AlN <jats:styled-content>$(1 \bar 102) $<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/tex2gif-ueqn-5.gif" xlink:title="equation image" /></jats:styled-content> films were 1180 arcsec and 1620 arcsec for symmetric <jats:styled-content>$1 \bar 102 $<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/tex2gif-ueqn-6.gif" xlink:title="equation image" /></jats:styled-content> diffraction and in‐plane <jats:styled-content>$11\bar 20 $<jats:inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/tex2gif-ueqn-7.gif" xlink:title="equation image" /></jats:styled-content> diffraction, respectively. These results indicate that the use of the RT‐AlN layers and the ZnO substrates would be quite attractive for fabrication of high efficiency UV light emitting devices. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p>