Growth and ferroelectric properties of Bi2VO5.5 thin films with metallic LaNiO3 electrodes

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  • K. V. R. Prasad
    Materials Research Center, Indian Institute of Science, Bangalore 560012, India
  • K. B. R. Varma
    Materials Research Center, Indian Institute of Science, Bangalore 560012, India
  • A. R. Raju
    Materials Research Center, Indian Institute of Science, Bangalore 560012, India
  • K. M. Satyalakshmi
    Department of Metallurgy, Indian Institute of Science, Bangalore 650012, India
  • R. M. Mallya
    Department of Metallurgy, Indian Institute of Science, Bangalore 650012, India
  • M. S. Hegde
    Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India

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<jats:p>Novel ferroelectric bismuth vanadate, Bi2VO5.5 (BVO), thin films have been grown between lattice matched metallic LaNiO3 (LNO) layers deposited on SrTiO3 (STO) by the pulsed laser deposition technique. LNO/BVO/LNO/STO and Au/BVO/LNO/STO trilayer structures exhibited c-oriented (001) growth of BVO. LNO has been found to be a good metallic electrode with sheet resistance ∼20 Ω in addition to aiding c-axis oriented BVO growth. The dielectric constant, εr of LNO/BVO/LNO/STO, at 300 K was about 12. However, when an Au electrode was used on top of BVO/LNO/STO film, it showed a significant improvement in the dielectric constant (εr=123). The ferroelectric properties of BVO thin films have been confirmed by hysteresis behavior with a remnant polarization, Pr=4.6×10−8 C/cm2 and coercive field, Ec=23 kV/cm at 300 K.</jats:p>

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