Efficiency Improvement of Near‐Stoichiometric CuInSe<sub>2</sub> Solar Cells for Application in Tandem Devices

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  • Thomas Feurer
    Laboratory for Thin Films and Photovoltaics Empa—Swiss Federal Laboratories for Materials Science and Technology Ueberlandstrasse 129 8600 Duebendorf Switzerland
  • Romain Carron
    Laboratory for Thin Films and Photovoltaics Empa—Swiss Federal Laboratories for Materials Science and Technology Ueberlandstrasse 129 8600 Duebendorf Switzerland
  • Galo Torres Sevilla
    Laboratory for Thin Films and Photovoltaics Empa—Swiss Federal Laboratories for Materials Science and Technology Ueberlandstrasse 129 8600 Duebendorf Switzerland
  • Fan Fu
    Laboratory for Thin Films and Photovoltaics Empa—Swiss Federal Laboratories for Materials Science and Technology Ueberlandstrasse 129 8600 Duebendorf Switzerland
  • Stefano Pisoni
    Laboratory for Thin Films and Photovoltaics Empa—Swiss Federal Laboratories for Materials Science and Technology Ueberlandstrasse 129 8600 Duebendorf Switzerland
  • Yaroslav E. Romanyuk
    Laboratory for Thin Films and Photovoltaics Empa—Swiss Federal Laboratories for Materials Science and Technology Ueberlandstrasse 129 8600 Duebendorf Switzerland
  • Stephan Buecheler
    Laboratory for Thin Films and Photovoltaics Empa—Swiss Federal Laboratories for Materials Science and Technology Ueberlandstrasse 129 8600 Duebendorf Switzerland
  • Ayodhya N. Tiwari
    Laboratory for Thin Films and Photovoltaics Empa—Swiss Federal Laboratories for Materials Science and Technology Ueberlandstrasse 129 8600 Duebendorf Switzerland

Abstract

<jats:title>Abstract</jats:title><jats:p>State‐of‐the‐art Cu(In,Ga)Se<jats:sub>2</jats:sub> (CIGS) solar cells are grown with considerably substoichiometric Cu concentrations. The resulting defects, as well as potential improvements through increasing the Cu concentration, have been known in the field for many years. However, so far, cells with high Cu concentrations show decreased photovoltaic parameters. In this work, it is shown that RbF postdeposition treatment of CuInSe<jats:sub>2</jats:sub> solar cells allows for capturing the benefits from the improved absorber quality with increasing Cu content. A reduced defect density and an increased doping level for cells with high Cu concentrations close to stoichiometry are demonstrated. Implementing a high mobility front transparent conductive oxide (TCO), the improved absorbers with 1.00 eV bandgap yield a solar cell efficiency of 19.2%, and combined with a perovskite top cell a 4‐terminal tandem efficiency of 25.0% are demonstrated, surpassing the record efficiency of both subcell technologies.</jats:p>

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