Properties of nanoporous silica thin films determined by high-resolution x-ray reflectivity and small-angle neutron scattering

DOI PDF 被引用文献3件
  • Wen-li Wu
    Polymers Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899-8541
  • William E. Wallace
    Polymers Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899-8541
  • Eric K. Lin
    Polymers Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899-8541
  • Gary W. Lynn
    Polymers Division, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899-8541
  • Charles J. Glinka
    Center for Neutron Research, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899-8562
  • E. Todd Ryan
    SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741-6499
  • Huei-Min Ho
    SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741-6499

説明

<jats:p>A new methodology based on a novel combination of a high-resolution specular x-ray reflectivity and small-angle neutron scattering has been developed to evaluate the structural properties of low-dielectric-constant porous silica thin films about one micrometer thick supported on silicon wafer substrates. To complement these results, film composition was determined by high-energy ion scattering techniques. For the example thin film presented here, the overall film density was found to be (0.55±0.01) g/cm3 with a pore wall density of (1.16±0.05) g/cm3 and a porosity of (53±1)%. The characteristic average dimension for the pores was found to be (65±1) Å. It was determined that (22.1±0.5)% of the pores had connective paths to the free surface. The mass fraction of water absorption was (3.0±0.5)% and the coefficient of thermal expansion was (60±20)×10−6/°C from room temperature to 175 °C. Lastly, model fitting of the specular x-ray reflectivity data indicated the presence of a thin surface layer with an increased electron density compared to the bulk of the film as well as an interfacial layer with a reduced electron density.</jats:p>

収録刊行物

被引用文献 (3)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ