Microstructural, electrical, and optical properties of SnO2 nanocrystalline thin films grown on InP (100) substrates for applications as gas sensor devices
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- T. W. Kim
- Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea
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- D. U. Lee
- Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea
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- Y. S. Yoon
- Applied Physics Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul, Korea
書誌事項
- 公開日
- 2000-09-15
- DOI
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- 10.1063/1.1288021
- 公開者
- AIP Publishing
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説明
<jats:p>SnO 2 thin films were grown on p-InP (100) substrates by using radio-frequency magnetron sputtering at low temperature. Transmission electron microscopy (TEM) and electron diffraction pattern measurements showed that these SnO2 thin films were nanocrystalline. The capacitance–voltage measurements at room temperature showed that the type and the carrier concentration of the nominally undoped SnO2 film were n type and approximately 1.62×1016 cm−3, respectively. Raman scattering measurements showed that the grain sizes of the nanocrystalline films were below 10 nm, which was in reasonable agreement with the result obtained from the high-resolution TEM measurements. Photoluminescence measurements showed a broad peak below the band-to-band emission. These results can help improve the understanding of SnO2 nanocrystalline films grown on p-InP (100) substrates for applications in high-sensitivity gas sensors.</jats:p>
収録刊行物
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- Journal of Applied Physics
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Journal of Applied Physics 88 (6), 3759-3761, 2000-09-15
AIP Publishing