MgAl2O4(001) based magnetic tunnel junctions made by direct sputtering of a sintered spinel target
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- Mohamed Belmoubarik
- National Institute for Materials Science , 1-2-1 Sengen, Tsukuba 305-0047, Japan
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- Hiroaki Sukegawa
- National Institute for Materials Science , 1-2-1 Sengen, Tsukuba 305-0047, Japan
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- Tadakatsu Ohkubo
- National Institute for Materials Science , 1-2-1 Sengen, Tsukuba 305-0047, Japan
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- Seiji Mitani
- National Institute for Materials Science , 1-2-1 Sengen, Tsukuba 305-0047, Japan
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- Kazuhiro Hono
- National Institute for Materials Science , 1-2-1 Sengen, Tsukuba 305-0047, Japan
説明
<jats:p>We developed a fabrication process of an epitaxial MgAl2O4 barrier for magnetic tunnel junctions (MTJs) using a direct sputtering method from an MgAl2O4 spinel sintered target. Annealing the sputter-deposited MgAl2O4 layer sandwiched between Fe electrodes led to the formation of a (001)-oriented cation-disorder spinel with atomically sharp interfaces and lattice-matching with the Fe electrodes. A large tunnel magnetoresistance ratio up to 245% at 297 K (436% at 3 K) was achieved in the Fe/MgAl2O4/Fe(001) MTJ as well as an excellent bias voltage dependence. These results indicate that the direct sputtering is an alternative method for the realization of high performance MTJs with a spinel-based tunnel barrier.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 108 (13), 132404-, 2016-03-28
AIP Publishing
