Kinetics of photoconductivity in <i>n</i>-type GaN photodetector

DOI PDF 被引用文献8件
  • P. Kung
    Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208
  • X. Zhang
    Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208
  • D. Walker
    Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208
  • A. Saxler
    Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208
  • J. Piotrowski
    Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208
  • A. Rogalski
    Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208
  • M. Razeghi
    Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208

書誌事項

公開日
1995-12-18
DOI
  • 10.1063/1.115385
公開者
AIP Publishing

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説明

<jats:p>High-quality ultraviolet photoconductive detectors have been fabricated using GaN layers grown by low-pressure metalorganic chemical vapor deposition on (11⋅0) sapphire substrates. The spectral responsivity remained nearly constant for wavelengths from 200 to 365 nm and dropped sharply by almost three orders of magnitude for wavelengths longer than 365 nm. The kinetics of the photoconductivity have been studied by the measurements of the frequency-dependent photoresponse and photoconductivity decay. Strongly sublinear response and excitation-dependent response time have been observed even at relatively low excitation levels. This can be attributed to redistribution of the charge carriers with increased excitation level.</jats:p>

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